RADECS 2017
The aim of RADECS 2017 conferences is to provide an annual European forum for the presentation and discussion of the latest advances in the field of radiation effects on electronic and photonic materials, devices, circuits, sensors, and systems. The scope of the conference encompasses technological processes and design techniques for producing radiation tolerant systems for space, aeronautical or terrestrial applications, as well as relevant methodologies for their characterization and qualification. The conference features a technical program, an Industrial Exhibit, and one day tutorial or ‘short course’ on radiation effects. The technical program includes oral and poster sessions and round tables.
It will be held October 2nd to 6th in Geneva, Switzerland at the Centre International des Congrès de Genève (CICG).
Alter Technology will be at Industrial Exhibition booth #20
From Space, to Ground and Below
- Basics Mechanisms of Radiation Effects in Electronic Devices and Materials.
- Radiation Effects on Electronic, Optoelectronic and Photonic Devices and Circuits.
- Space, Atmospheric, Terrestrial and Accelerator Radiation Environments.
- Hardness Assurance Technology, Methodology.
- Qualification and Testing.
- In Orbit Radiation Studies
- Best Paper and Outsanding Contribution
Where Students are Discovered and Advancements are Made!
Participate at RADECS 2017 and profit from “Special Student Events“, become one of at least 10 sponsored students including shor-course and conference fees, as well as lodging.
Meet organizations, universities and companies to pave your way for the future, Spend the last day at CERN and discover unique science and technology.
Technical Sessions
Radiation Effects in Devices and ICs
Marta Bagatin – Padova University – Italy
Yago Velo Gonzalez – Arizona State University – USA
Basic Mechanisms of Radiation Effects
Ron Schrimpf – Vanderbilt University – USA
Frederic Saigne – Montpellier University – France
Hardness Assurance
Cesar Boatella – ESA – Netherlands
Aleksandr Koziukov – ISDE – Russia
Single Event Effects in Devices and ICs
Michael King – Sandia National Lab – USA
Ketil Roeed – Oslo University – Norway
Radiation Environments (Space, Terrestrial and Accelerators)
Frederic Wrobel – Montpellier University – France
Sebastien Bourdarie – ONERA – France
Single Event Transients
Françoise Bezerra – CNES – France
Nicolas Roche – George Washington University – USA
Radiation Effects in Optoelectronics Devices
Vincent Goiffon – ISAE/Supaero – France
Marco Van Uffelen – F4E – Spain
Facilities and Dosimetry
Arto Javanainein – Jyvaskyla University – Finland
Michael Trinczek – TRIUMF – Canada
Hardening by Design
Lawrence Clark – Arizona State University – USA
Fernanda Lima Kastensmidt – Rio Grande University – Brazil
Single Event Effects Mechanisms and Modelling
Pavel Chubunov – ISDE – Russia
Laurent Artola – ONERA – France
Analog and Mixed-Signal Integrated Circuits for Radiation Environments (New Session)
Boris Glass – ESA – Netherlands
Ken Wyllie – CERN – Switzerland
Radiation Hardness Approach at system level (New Session)
Salvatore Danzeca – CERN – Switzerland
Florent Miller – Airbus Defence and Space – France
Radiation Effects on Materials (New Session)
Marc Tavlet – CERN – Switzerland
Elisabeth laurent – CNES – France
In-Orbit Low-Cost Radiation Studies (Nanosat, Stratobus …) (New Session)
Philippe Adell – NASA – USA
Eric Lorfevre – CNES – France
Radiation Tests and Components Qualification – Engineering Troubleshooting (New Session)
Ken Label – NASA – USA
Wojtek Hajdas – PSI – Switzerland
Poster Session
Philippe Paillet – CEA – France
Marty Shaneyfelt – Sandia National Lab – USA
Radiation Effects Data Workshop
Nathalie Chatry – TRAD – France
Stefan Metzger – Fraunhofer – Germany
