Beam diagnosis intended to be used by hospitals and at nuclear facilities, with a scintillator with silicon and germanium arrays Novel 3D silicon technology applications: telescope and radiation detection High/medium ion and gamma energy reconstruction Hadrontherapy techniques...
Radiation sensors: NEUTOR Development of specific radiation sensors, based on EEPROM, for radiotherapy and other applications
To study and predict radiation induced degradation of optoelectronic devices, with particular interest in image sensors based on APS (active pixel sensing) technology, as well as of InGaN, GaP and AlInGaP semiconductor materials.
HCP306HV hot/cold plate of 150mm x 150mm dimensions LN2 pumping system w/10L LN2 dewar to be used as a portable system mK1000U temperature controller unit with a temperature range of -100°C to +200ºC Vacuum chamber allowing vacuum conditions of 1E-3mbar with lid cover and 100mm...
Electromagnetic compatibility testing in accordance with the MIL-STD-461 E/F, MIL-STD-461, EN 61326-1, Safety testing in accordance with EN 61010-1 and Environmental testing in accordance with MIL-STD-810 F/G/G.
Technical Program All the Papers are available to download following the links. 31 st March 9’00 Joaquin Gómez Camacho, Director Centro Nacional de Aceleradores (CNA) Jose Guadix, Director General of Technology Transfer, University of Seville (USE). Miguel Ferrer...
DISPLACEMENT DAMAGE Displacement Damage is the result of nuclear interactions, typically scattering, which cause lattice defects. Displacement damage degrades minority carrier lifetime; a typical effect would be degradation of gain and leakage current in bipolar...
Access to SiC manufacturers (ACREO, INFINEON, SEMELAB, ST…..) -ATN as reference test house -To define NEW test methods to understand SiC performance
Examples of Projects: Radiative optoelectronic components vulnerability Britespace Photonic transceiver for secure space communications
-Screening of a high number of devices under very harsh conditions: Custom testing setup -High Temperature: 270ºC -Low temp: -170ºC -High Voltage tests: 250V -High Power tests: 2.5A
CHARACTERIZATION OF RADIATION HARDENED SIC MOS STRUCTURES Key elements -Full characterization of several foundries comprising oxidation processing, packaging approach, etc. -To consolidate test methods and associated standards for SiC characterization
Access to SiC manufacturers (ACREO, INFINEON, SEMELAB, ST…..) -ATN as reference test house -To define NEW test methods to understand SiC performance
