Laser beam brings unique capabilities for radiation hardness evaluation and testing of electronic components and systems. The presentation describes various laser techniques and approaches for radiation effects testing and research used in Russia by NRNU MEPhI and SPELS: SEE...
![](https://wpo-altertechnology.com/wp-content/uploads/2022/12/ALTER_Logo_Electric-Blue-removebg-preview.png)
A modular architecture specifically designed for integrating technology demonstrators and test applications in a fast-to-orbit cycle allows any interested team to prepare its payload for flight into orbit in less than 1 year. Existing radiation models and continuous monitoring...
![Component and System Testing at the CHARM Mixed-Field Facility – CERN](https://wpo-altertechnology.com/wp-content/uploads/2016/03/CERN-high-energy-accelerator-environment-1-310x232.png)
Electronics systems designed for applications in high radiation environments, such as space missions, high energy accelerators and avionics, are subject to a radiation qualification process at component level which is often time consuming and expensive. The new CERN High energy...
![](https://wpo-altertechnology.com/wp-content/uploads/2016/03/Energy-transfer-from-particle-to-matter-300x125-1.png)
Goal of the study • Propose a DD test standard • Should be available by the end of the year after ESA and Components Technology Board (CTB)/Radiation Working group (RWG) comments • Goal of this presentation ⇒ Not a draft of the future guidelines, but: • Remind the physical...
![radiation testing sic power device](https://wpo-altertechnology.com/wp-content/uploads/2016/03/radiation-testing-sic-power-device-310x232.jpg)
New failure modes not observed in Silicon appear while testing SiC MOSFET and Schottky diodes and under heavy ions radiation. Gate damage in transistors remains undetected even monitoring drain current and gate leakage of the transistor under high voltage biasing conditions.
![](https://wpo-altertechnology.com/wp-content/uploads/2016/02/Photodiodes.jpg)
La evaluación de confiabilidad de los Fotódulos Pin SI del Área fue un tema de exhibición en el Primer Simposio Internacional sobre Confiabilidad de Optoelectrónica para el Espacio que tuvo lugar en Cagliari, Italia, entre el 11 y el 14 de mayo de 2009. INTA, the Instituto...