The Current State and Perspectives of Laser Radiation Hardness Investigation and Testing Techniques in Russia

Talk summary:
Laser beam brings unique capabilities for radiation hardness evaluation and testing of electronic components and systems. The presentation describes various laser techniques and approaches for radiation effects testing and research used in Russia by NRNU MEPhI and SPELS: SEE sensitivity parameter estimation and confirmation, IC chip de-capsulation and identification, etc. The brief compendium of laser tests during last years is also provided.

Speaker:

Andrey N. Egorov, head specialist, laser systems group head, joined National Research Nuclear University MEPhI in 1984. He has more than 30 years of experience in research and development of laser, optic and electronic systems. Since 1996 in cooperation with Specialized Electronic Systems he works on laser simulation of radiation effects in semiconductor devices, he is a co-author of more than 40 published works in this topic. He has M.S. in physics and Ph.D. in technical sciences.

Laser techniques for radiation hardness evaluation and testing

The Current State and Perspectives of Laser Radiation Hardness Investigation and Testing Techniques in Russia

Single event effects

SEE is a serious limitation for the reliability of electronic components, circuits, and systems for space applications SEEs can be simulated by focused ultra-short pulsed laser beam
Advantages:

Lower price
Easy to implement
Testing of separate IC elements

Disadvantages:

Can’t pass through metal layers
Does not ionize dielectric layers
Can’t be focused to nanosize spot

Sample preparation

It is possible to use laser for IC chip decapsulation and preparation:

metal cover removal
ceramic or plastic package removal
substrate thinning (for back-side irradiation)

Chip identification

The Current State and Perspectives of Laser Radiation Hardness Investigation and Testing Techniques in Russia

Focused laser facilities: the role and place in SEE research and testing

Debugging of testing procedures and equipment;
Ion and laser SEE cross section curves correlation;
Testing of flip chip ICs;
SEE sensitive nodes mapping;
Volt-Ampere characterization of parasitic p-n-p-n structures;
SEL “Survival” test of ICs;
Performance check of SEE protection systems;
SEE test at different temperatures, electric modes, etc.

SEE laser tests principles

Laser can produce almost all types of SEEs.
Two main mechanisms of charge generation:
− single photon absorpFon;
− two photon absorption.
Spatial distributions of generated charge by laser and ions differ, but the electrical effects are practically the same.