How approach a heavy ions test using SiC power devices – Radiation Testing

Radiation Testing – How approach a heavy ions test on a new device technology using SiC power devices as an example

Talk summary: New failure modes not observed in Silicon appear while testing SiC MOSFET and Schottky diodes and under heavy ions radiation. Gate damage in transistors remains undetected even monitoring drain current and gate leakage of the transistor under high voltage biasing conditions.

Only a PIGS (Post Irradiation Gate Stress) test reveals the cumulative damage caused by the ions reducing the voltage withstanding capability of the gate oxide. A different problem appears while testing SiC Schottky diodes where combination of high voltage and heavy ions leads to cumulative irreversible degradation.

New testing strategies need to be applied in order to detect and try to understand these new failure modes.

This better understanding starts from detecting the critical parameters involved and try to define safe operating conditions that would allow the space usage of SiC power devices.

Play the Video PAPER or download the presentation.

Download (PDF, 1.09MB)

radiation testing sic power device

Juan Moreno obtained his Bachelor Degree in Physics at the Universidad Complutense of Madrid. He has been responsible at ATN of the screening and qualification of the BepiColombo and Solar Orbiter solar array SiC Schottky blocking diodes as well as technical responsible for MOS and JFET SiC transistors evaluation. Currently, he is responsible of SiC HV SiC diodes and radiation hardened MOS structures evaluation.