Innovation in Alter Technology is the process of translating an idea or invention into a good service that creates value for our customers and partners. To introduce something new as an idea or method, our company involves information, imagination and initiative on the part of our engineers; investment time – and a balanced portfolio of initiatives with sufficient resources to be a leader in the market.
The expectations of our customers are a need to satisfy by our professionals who have as
reference that innovation is evolutionary, continuous and dynamic, this is achieved through the great advances in technology with which we work in our facilities and ultimately, the processes to translate the proposals into a value proposition that are winners.
Innovation is synonymous with taking risks, for that reason, Alter Technology evolves, to be at the top of new business models that offer sources of scalable and defensible benefits. We understand the importance of offering new processes and products and not imitating others, and that is why we have a consolidated group of motivated, rewarded and organized professionals to innovate and beat the competition, launching innovation at the correct scale in the market and the ideal segments.
Semiconductor Innovation (2)
Radiation Papers EEE Parts (22)
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There are well-known advantages to using these photonic technologies in space, such as the limited generation of noise, electromagnetic immu...
The use of radiation tools is justified as a complement of radiation test to verify and optimize the radiation hardness assurance process in...
The burgeoning demand for the incorporation of disruptive technologies into space industry clearly requires fast and reliable procedures for...
This study aims to support the development of discrete European radiation hardened SiC power MOSFET for use in space applications by means o...
The new century brought to the space a new type of solar cells with higher efficiencies and better resistance to radiation damage such as th...
Optical & Electrical parameters; Characterization of SiC JFET & MOSFET; Prototyping and Characterisation of Radiation Hardened SIC MOS Struc...
New test methodologies: Combined Vacuum Temperature and Motion; Combined strain and extreme temperature; Combined radiation and cold temper...
Very Extreme temperature Testing Parts: Assessment of surrounding passive parts; Development of specific parts; Development of specific p...
Bakeout and very Extreme temperature Testing Facilities; The updated facilities comprises: 8 cryogenic chambers with a temperature range f...
The use of differential (or balanced) digital and analog circuits for information processing has increased in recent years . When transmitti...
Surface contamination involving micrometric particles, microbiological agents, molecular adsorbate and others, represent a significant hazar...
The procurement, evaluation, screening and lot acceptance of RF devices in leadless SMD packages to be used in spacecraft applications show...
A compact balanced-to-balanced diplexer composed of two balanced bandpass filters is proposed in this letter. The balanced filters are imple...
Traditionally ASICs (and FPGAs) used in space were manufactured using Rad-Hard technologies and designed with special libraries. AS CMOS Te...
Passive liquid crystal (LC) devices are becoming an interesting alternative for the manufacturing of photonic devices in spatial application...
Space radiation environment is an important failure causing factor in space vehicles. Traditional reliability prediction method did not inc...
1. Admissible methods for SEE testing were determined on accounts of their realization at Roscosmos Test Facilities. 2. The SEE Testing Aid...
Many basic testers availables which offer the capability to carry out a test in a rather short delay (a few weeks) at a relatively low cost....
Radiation sensitivity of GaAs components is not really well known, compare to other technologies. Traditional radiation harness policy consi...
New failure modes not observed in Silicon appear while testing SiC MOSFET and Schottky diodes and under heavy ions radiation. Gate damage in...
Goal of the study • Propose a DD test standard • Should be available by the end of the year after ESA and Components Technology Board (CT...
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