Fabrication technology and packaging strategy for 300V-5A Silicon Carbide Schottky diodes with a wide temperature operation range capability (between -170ºC and 300ºC). These diodes have been designed for harsh environment space applications such as inner Solar System exploration probes.
The use of photonic technologies for space applications has risen the problem related to the ability of optoelectronic and optic components to withstand space environment as all optoelectronic and optic components come from terrestrial applications. Therefore, the development of photonic technologies for space applications has made the selection and acceptance test criteria of all optoelectronic and optic components that are part of the photonic system imperative. The paper presents a summary of the experience of Alter Technology Group on the mechanical, thermal, radiation and endurance testing on several photonics technologies.
After expose key elements on the evaluation of Optoelectronic Components for Space Applications, where thermal vacuum and other environmental restrictions such temperature range, radiation or vibration and examples of Optoelectronic characterizati0ons done in our laboratories, we have been proveed that Alter Technology Group is the world´s leader in engineering, testing and procurement of High Reliability Electronic Components
Project developed in the frame of ESA TRP contract -Environmental characterization of different LC technologies -Design and manufacturing of EBB laser beam steering based on LC -Thermal, thermal vacuum, vibration and radiation tests
Strain measurements Load Tester coupled to a climatic chamber with a custom extension Climatic chamber Strain Gages Vacuum Thermal Cycling Bending and unbending in vacuum Monitoring each strain gage Temperature cycles in vacuum
CHARACTERIZATION OF RADIATION HARDENED SIC MOS STRUCTURES Key elements -Full characterization of several foundries comprising oxidation processing, packaging approach, etc. -To consolidate test methods and associated standards for SiC characterization