To study and predict radiation induced degradation of optoelectronic devices, with particular interest in image sensors based on APS (active pixel sensing) technology, as well as of InGaN, GaP and AlInGaP semiconductor materials.
To study and predict radiation induced degradation of optoelectronic devices, with particular interest in image sensors based on APS (active pixel sensing) technology, as well as of InGaN, GaP and AlInGaP semiconductor materials.
