Characterization of SiC JFET & MOSFET

Project: Characterization of SiC JFET & MOSFET 

Customer: ESA (European Space Agency)

Key elements

• -Access to SiC manufacturers (ACREO, INFINEON, SEMELAB, ST…..)
• -Alter Technology as reference test house
• -To define NEW test methods to understand SiC performance

Evaluation of SiC JFET & MOSFET 

• Key Testing parameters:
• Temperature characterization: SiC -> T>150ºC
• High Voltage (up to 1700V) plus high temperature testing (175ºC)
• High Power Tests: 17A Devices
• Evaluation of maturity of technology for space applications:
• Reliability issues of some JFET commercial devices (early stages of normally OFF technology)
• Threshold instabilities in SiC MOSFET
• Good performance of JFET Normally ON products. Life tests with good results.

Evaluation of SiC JFET & MOSFET 

• -Radiation testing:
• -Sensitivity of SiC MOSFET to TID
• -Sensitivity of SiC MOSFET to Heavy Ions

• Graph1.  SiC MOSFET gate sensitivity to Heavy Ions detected by means of PIGS (Post Irradiation Gate Stress) test.
• Graph2. Gate degradation (Vth decrease) of SiC MOSFET under TID.