Characterization of SiC JFET & MOSFET

Project: Characterization of SiC JFET & MOSFET

Customer: ESA (European Space Agency)

Characterization of SiC JFET MOSFET

Key elements

  • -Access to SiC manufacturers (ACREO, INFINEON, SEMELAB, ST…..)
  • -ATN as reference test house
  • -To define NEW test methods to understand SiC performance

Evaluation of SiC JFET & MOSFET

  • Key Testing parameters:
  • Temperature characterization: SiC -> T>150ºC
  • High Voltage (up to 1700V) plus high temperature testing (175ºC)
  • High Power Tests: 17A Devices
  • Evaluation of maturity of technology for space applications:
  • Reliability issues of some JFET commercial devices (early stages of normally OFF technology)
  • Threshold instabilities in SiC MOSFET
  • Good performance of JFET Normally ON products. Life tests with good results.
Failures-in-commercial-JFET-device

Failures in commercial JFET devices at 175ºC

Vth hysteresis on SiC MOSFETS

Vth hysteresis on SiC MOSFETS

Evaluation of SiC JFET & MOSFET

  • -Radiation testing:
  • -Sensitivity of SiC MOSFET to TID
  • -Sensitivity of SiC MOSFET to Heavy Ions

Evaluation of SiC JFET MOSFET

  • Graph1.  SiC MOSFET gate sensitivity to Heavy Ions detected by means of PIGS (Post Irradiation Gate Stress) test.
  • Graph2. Gate degradation (Vth decrease) of SiC MOSFET under TID.