Optical & Electrical parameters; Characterization of SiC JFET & MOSFET; Prototyping and Characterisation of Radiation Hardened SIC MOS Structures; Photonic parts in Mars exploration related programmes;
New space missions include more extreme requirements of storage and operational temperatures and vacuum conditions exceeding standard -55ºC / +125ºC conditions Miniaturization implies increase higher power dissipation and hence max junction and PCB temperatures.
Reliability testing of passive parts for very extreme temperature applications
Very extreme temperature testing Alter Technology has developed specific capabilities to support very extreme temperature testing on the full range of parts, equipments and materials Several cryogenic chambers with temperature range -185ºC to +315ºC Open-air thermal tables with...
CHARACTERIZATION OF RADIATION HARDENED SIC MOS STRUCTURES Key elements -Full characterization of several foundries comprising oxidation processing, packaging approach, etc. -To consolidate test methods and associated standards for SiC characterization
-Part to be provided as an ATN proprietary component -Large demand for TWTA applications -Unique parts with regard to a large reverse voltage, the highest operating temperature, low reverse current at high temperature and good switching performances at high frequency
-New space missions impose stricter requirements on storage, vacuum conditions and operating temperature, exceeding the standard -55ºC / +125ºC range -Parts reliability has to be reanalysed to ensure mission performance -Specific characterization delta qualification tests have...