Radiation Hardened SIC MOS Structures

Project: PROTOTYPING AND CHARACTERIZATION OF RADIATION HARDENED SIC MOS STRUCTURES 

Customer: ESA (European Space Agency)

CHARACTERISATION OF RADIATION HARDENED SIC MOS STRUCTURES

CHARACTERIZATION OF RADIATION HARDENED SIC MOS STRUCTURES

Key elements

  • -Full characterization of several foundries comprising oxidation processing, packaging approach, etc.
  • -To consolidate test methods and associated standards for SiC characterization

TID and HIF Sensitivity evaluation of SiC MOSFET body diodes 

  • Several Single Die MOSFETs packaged in DIL -> Heavy Ions Testing of several structures at the same time
  • Different channel length and width in the same die for radiation sensitivity evaluation
  • Different dice of several oxide types for oxide radiation sensitivity evaluation
  • Body diodes to be packaged separately in suitable HV packages to allow HV under heavy ions testing
  • Different epilayers used. Quality of epilayer evaluation
  • Different raw materials: Evaluation of wafer quality and of its impact on radiation hardness

CHARACTERISATION OF RADIATION HARDENED SIC MOS STRUCTURES

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