To study and predict radiation induced degradation of optoelectronic devices, with particular interest in image sensors based on APS (active pixel sensing) technology, as well as of InGaN, GaP and AlInGaP semiconductor materials.
Últimas entradas de Media ATN (ver todo)
- Inmunidad conducida - 20th mayo 2019
- Ensayos de Transitorios eléctricos - 2nd mayo 2019
- Ensayo Campo de RF radiado - 2nd mayo 2019