Radiation degrades EEE components and generates device perturbations that could lead to its malfunction or destruction. These effects are highly dependent on the radiation type: gamma radiation, heavy ions, protons, etc., but also on the device technology, the manufacturing lot...
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New failure modes not observed in Silicon appear while testing SiC MOSFET and Schottky diodes and under heavy ions radiation. Gate damage in transistors remains undetected even monitoring drain current and gate leakage of the transistor under high voltage biasing conditions.
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Electronics systems designed for applications in high radiation environments, such as space missions, high energy accelerators and avionics, are subject to a radiation qualification process at component level which is often time consuming and expensive. The new CERN High energy...
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Accelerators are the accepted method to validate a device to flight. In vivo testing is a complex and expensive task that is needed to get information about how failures can propagate to primary outputs and monitor that the response of a design is correct. There is a strong...
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VA160 and VATA160 are used as front-end readout ASICs in the payloads of DAMPE. Both Laser pulse test and heavy ion beam test were conducted to get the SEL tolerance of the ASICs. Laser test was performed firstly to quality the SEL sensitivity because it is easy and ready at all...