Developing the 1200V SiC Diode

Project: Developing the 1200V SiC Diode

Customer: ESA (European Space Agency)

Developing of 1200V SiC Diode

Key elements

  • -Part to be provided as an ATN proprietary component
  • -Large demand for TWTA applications
  • -Unique parts with regard to a large reverse voltage, the highest operating temperature, low reverse current at high temperature and good switching performances at high frequency

Development of SiC 1200V diodes

  • Packaging designed to withstand high voltage applications using SiC while being a direct replacement for Si technology currently in use
  • Fwd Vdrop restrictions -> Special die size -> Custom enlarged LCC2
  • Package shall prove good results in:
  • Isolation at HV and HT combination (@1300V)
  • Good thermal dissipation
  • Corona tests in vacuum conditions
Reverse characterization up to 1500V

Reverse characterization up to 1500V (130ºC)

Capacitance Measurements Vs Reverse biasing

Capacitance Measurements Vs Reverse biasing