Developing the 1200V SiC Diode

Project: Developing the 1200V SiC Diode 

Customer: ESA (European Space Agency)

Key elements

• -Part to be provided as an Alter Technology proprietary component
• -Large demand for TWTA applications
• -Unique parts with regard to a large reverse voltage, the highest operating temperature, low reverse current at high temperature and good switching performances at high frequency

Development of SiC 1200V diodes 

• Packaging designed to withstand high voltage applications using SiC while being a direct replacement for Si technology currently in use
• Fwd Vdrop restrictions -> Special die size -> Custom enlarged LCC2
• Package shall prove good results in:
• Isolation at HV and HT combination (@1300V)
• Good thermal dissipation
• Corona tests in vacuum conditions