Low Temperature Radiation Test of High Voltage Optocouplers for Space Application
Enrique Cordero 1, Laura Peñate 1, Juan Barbero 1, Gianandrea Quadri 2, Jérôme Carron 2, Henry-Claude Séran 3 Yolanda Morilla 4, Gema Muñiz 4, Silvia Massetti 5 1 ALTER Technology TÜV NORD S.A.U. (Spain), 2 CNES – Centre National d’Etudes Spatiales (France), 3 IRAP- Institut de Recherche en Astrophysique et Planétologie (France), 4 CNA Centro Nacional de Aceleradores (Spain),5 ESA-ESTEC (Netherlands)
Previous studies in radiation induced degradation in optocouplers at room temperature indicated that the most affected parameters were CTR and dark current (1,2). This fact is also applicable to high voltage (HV) optocoupler where the working voltage could go up to 10KV.
In space applications, optocouplers may need to work at very low temperatures. Under this low temperature operating conditions, the device degradation subjected to radiation exposure may show different behaviour compared to a standard radiation test under room temperature. The purpose of this paper is to analyse the effects of proton displacement damages up to 8•1011p/cm2 and total ionisation dose up to 100Krad (Si)) at room and low temperature (i.e. 25ºC and -40ºC) on custom assemblies of High Voltage (HV) Optocouplers. The HV opto-coupler assembly, radiation setups for low temperature Gamma and Displacement Damage radiation tests are described in detailed.